Breaking spatial inversion symmetry is crucial for inducing nonreciprocal superconducting transport. This talk discusses the realization of two distinct nonreciprocal superconducting effects via artificially engineered spatial symmetry breaking: the vortex-ratchet-flow diode (V-SDE) [1-3], characterized by a vortex-flow resistance under the reversed current, and the superconducting-to-normal-transition diode (SN-SDE) [4-6], defined by a normal-state resistance under the reversed current. Drawing on our team's recent progress [1-6], the presentation first explores switchable V-SDEs configured with artificial magnetic potentials [1] and the magnetic-field-driven V-SDE (magnetic nonreciprocal effect) [3]. We will also discuss the intrinsic connections linking electrical and magnetic nonreciprocal transport with spatial inversion symmetry and antisymmetry [2]. Subsequently, we will highlight SN-SDEs induced by artificial nanoscale geometric asymmetry [4] and thermal gradient [5]. Finally, we will demonstrate a high-temperature superconducting diode realized in an asymmetric intrinsic Josephson junction, which achieves a record-high operating temperature of up to 86 K [6]. Together, these works provide a clear physical framework for precisely distinguishing different superconducting nonreciprocal transport mechanisms, paving a new pathway for the development of high-temperature, multifunctional, and high-performance superconducting electronic devices.

[1] Nature Nanotechnology 13, 560 (2018)
[2] Nano Letters 24, 4108 (2024)
[3] Chinese Physics Letters 41, 067402 (2024)
[4] Nature Communications 12, 2703 (2021)
[5] Nano Letters (2026) https://doi.org/10.1021/acs.nanolett.6c00080
[6] arXiv:2508.06083 (2025) National Science Review (accepted)