Doping-dependent critical current density in Bi2212 single crystals: Implications for phase diagram

Author: Ishida, Shigeyuki

Affiliation: AIST

Type: Poster

Display Dates: 22.07.2026 - 23.07.2026

Board: WT-009

The critical current density Jc is a key parameter for superconducting applications; meanwhile, in unconventional superconductors such as cuprates and iron-based systems, it can also reflect the characteristics of the underlying electronic phase diagram. Previous studies have reported sharp peaks in Jc at specific carrier concentrations, which have been discussed in connection with quantum criticality and the associated evolution of superconducting parameters. In this study, we systematically investigate the doping dependence of Jc in Bi2Sr2CaCu2O8+d (Bi2212) single crystals. We find that Jc exhibits two distinct peaks located in the underdoped and overdoped regions. Analyses of the magnetic field and temperature dependences of Jc reveal that this unusual behavior originates from the strong pinning mechanism. We also find that the strong pinning contribution is significantly enhanced by reduction annealing, suggesting that oxygen deficiency plays a crucial role in the enhancement of Jc. These results indicate that post-annealing treatments, which are commonly regarded as a means to control carrier concentration, simultaneously introduce substantial disorder that affects the electronic states and inhomogeneity. Our findings suggest that the interpretation of the electronic phase diagram of Bi2212 based solely on carrier concentration should be revisited, taking into account the influence of disorder.