On-device Control of Superconductivity-enabled Magnetism in NbSe2

Author: Oezyilmaz, Barbaros

Affiliation: National University of Singapore

Type: Poster

Display Dates: 22.07.2026 - 23.07.2026

Board: WT-119

Controlling magnetic order through superconducting parameters offers a route toward electrically tunable magnetism at cryogenic temperatures. While atomic-scale magnetic states in superconductors are well established, realizing collective magnetic order that is both device-integrated and electrically controllable has remained an open challenge. Here, we demonstrate superconductivity-enabled magnetism in NbSe2 by introducing dilute Co dopants through an atomically thin hBN diffusion barrier interstitially between the NbSe₂ layers. We form a magnetic tunneling junctions with Co and BN to probe the magentic state of the dilutely Co doped NbSe2. We observe a sharp two-level tunneling magnetoresistance typical of a magnetic tunneling junction (MTJ) that emerges exclusively well below the superconducting transition temperature and only at subgap energies, suggesting hybridized Yu-Shiba-Rusinov states. At high magnetic fields the junctions also exhibit re-entrant superconducting behavior. We further show that the magnetization configuration imprints two distinct, non-volatile subgap states, demonstrating reciprocal control between superconductivity and magnetism. These results suggest a new device platform in which magnetic order is created and electrically controlled by the superconducting state, providing a general strategy for engineering collective magnetism via superconducting correlations.