Ballistic graphene-NbSe2 Josephson junction in high parallel magnetic field
Author: Grynszpan, Einav
Affiliation: The Hebrew University of Jerusalem
Type: Poster
Display Dates: 20.07.2026 - 21.07.2026
Board: MT-052
Ballistic graphene-
Josephson junction in high parallel magnetic field
Einav Grynszpan, Ayelet Zalic, Pradheesh Ramachandran, Takashi Taniguchi, Kenji Watanabe, Anna Keselman and Hadar Steinberg
Planar graphene- Josephson junctions can support supercurrents at high in-plane magnetic fields (
) due to the robust superconductivity in thin
, protected from both orbital and spin-driven decay by a combination of atomic thickness and Ising spin orbit coupling. We fabricate and characterize a clean, flat graphene-
junction encapsulated in hexagonal boron nitride. The junction is ballistic, exhibiting Fabry–Pérot oscillations of the critical current, and supports very high critical current densities. The junction is remarkably robust to both in-plane and out-of-plane magnetic fields, and exhibits a clear ballistic Josephson effect up to the maximally available in-plane field of 8 T. We model the suppression of the critical current using a tight-binding model, accounting for the large overlap area between the
and graphene. We find that the suppression is governed by both the Zeeman splitting of Andreev bound states and by the flux threading the van-der-Waals gap that separates graphene from the
leads.
Grynszpan, E., Zalic, A., Ramachandran, P., Taniguchi, T., Watanabe, K., Keselman, A., & Steinberg, H. (2025). Ballistic graphene-NbSe 2 Josephson junction in high parallel magnetic field. 2D Materials, 12(4), 041004. https://doi.org/10.1088/2053-1583/ae07fa